报告人：Dr Francis C. C. Ling (Associate Professor, Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong)
报告题目：p-type doping of zinc oxide materials
报告时间：2010-4-27 10：30~11：30
报告地点：理科楼324 理学院多媒体室
主持人：物理系 吴萍
附：报告摘要
Abstract
ZnO is a wide band gap semiconductors receiving extensive attention because of its applications in UV optoelectronic, spintronic, transparent electronic devices, and etc. p-type and n-type dopings are crucial for the success of developing ZnO device technology. Undoped ZnO materials are n-type, but doping the material p-type is rather difficult. In this seminar, I will report our studies on fabricating p-type ZnO materials by nitrogen and arsenic dopings, as well as through Zn vacancy engineering. The fabricated materials were also studied by a multi-spectroscopic approach, including positron annihilation spectroscopy, X-ray photoelectron spectroscopy, deep level transient spectroscopy, photoluminescence, and etc, while bearing the aim identify the defects and characterize their role in shallow acceptors formation and compensation.
